Focused Ga+beam direct implantation for Si device fabrication
作者:
H. Hamadeh,
J. C. Corelli,
A. J. Steckl,
I. L. Berry,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1985)
卷期:
Volume 3,
issue 1
页码: 91-93
ISSN:0734-211X
年代: 1985
DOI:10.1116/1.583298
出版商: American Vacuum Society
关键词: SILICON;P−N JUNCTIONS;ION BEAMS;GALLIUM IONS;RESISTORS;PHOTORESISTS;LINE WIDTHS;LINE BROADENING;SILICA;ETCHING;IV CHARACTERISTIC;FABRICATION;ION COLLISIONS;ION IMPLANTATION;SEMICONDUCTOR DIODES;KEV RANGE 10−100;IMPURITIES;BORON IONS;Ga;Si;SiO2
数据来源: AIP
摘要:
A focused ion beam (FIB) has been used for Si submicron device fabrication.p‐njunctions and two terminal resistors were fabricated using a 60 keV Ga+ion beam of diameter as small as 0.2 μm. Typical resistor dimensions were 50–160 μm in length and 0.2–0.5 μm in width. The Ga+dose ranged from 5E13 to 5E14 Ga/cm2.I–Vmeasurements showed the correct dependence of resistance on resistor length, width, and impurity concentration. We have studied the broadening of lines implanted in Si and SiO2using a fixed ion beam diameter as a function of dose level. Selective etch (H3PO3at 180 °C for Si and HF for SiO2) and SEM analysis showed an increase of 50%–75% in linewidth as the dose was increased by an order of magnitude.
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