Fabrication of heterojunction bipolar transistors with buried subcollector layers for reduction of base-collector capacitance by molecular beam epitaxy regrowth
作者:
M. Micovic,
C. D. Nordquist,
D. Lubyshev,
T. S. Mayer,
D. L. Miller,
R. W. Streater,
A. J. SpringThorpe,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1998)
卷期:
Volume 16,
issue 3
页码: 962-967
ISSN:1071-1023
年代: 1998
DOI:10.1116/1.590231
出版商: American Vacuum Society
关键词: (Al,Ga)As
数据来源: AIP
摘要:
A process for fabrication of heterojunction bipolar transistors (HBTs) with selectively buried subcollectors by molecular beam epitaxy (MBE) regrowth is described. This process can be used to reduce parasitic base-collector capacitance of HBTs and improve the speed of these devices.In situetching by iodine prior to the regrowth was used for the first time to improve the quality of the substrate epilayer interface in a semiconductor device grown by MBE. The secondary ion mass spectroscopy depth profiles of regrown HBT structures suggest that thein situsurface cleaning by molecular iodine was not sufficient to remove all contamination from the substrate epilayer interface and that the microwave performance of HBTs fabricated by this process may have been affected by that contamination. The dc performance of devices which were fabricated by our process was not affected, however, by the contamination and was comparable to the dc performance of conventional HBTs. Our results suggest that the described process for fabrication of HBTs with selectively buried subcollectors by MBE regrowth would be feasible in conjunction with a more effective surface treatment.
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