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Profile control of SiH radicals by cross magnetic field in plasma processing

 

作者: H. Fujiyama,   T. Yamashita,   T. Takahashi,   H. Matsuo,  

 

期刊: Applied Physics Letters  (AIP Available online 1987)
卷期: Volume 50, issue 19  

页码: 1322-1324

 

ISSN:0003-6951

 

年代: 1987

 

DOI:10.1063/1.97894

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The distributions of optical emission intensity along the discharge axis in multiple‐parallel‐plate ac glow discharges were measured in the presence of a magnetic field perpendicular to the discharge electric field. In a SiH4(10%)/Ar discharge, time‐averaged spectroscopic measurements showed that profile control of not only plasmas but also SiH* was possible by varying the field strength. The emission intensity of SiH* was increased with the field strength. These results suggest that the present new configuration with cross magnetic field can make thin films on a large‐area substrate outside the multielectrodes uniform and can enhance the deposition rate.

 

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