Profile control of SiH radicals by cross magnetic field in plasma processing
作者:
H. Fujiyama,
T. Yamashita,
T. Takahashi,
H. Matsuo,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 50,
issue 19
页码: 1322-1324
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.97894
出版商: AIP
数据来源: AIP
摘要:
The distributions of optical emission intensity along the discharge axis in multiple‐parallel‐plate ac glow discharges were measured in the presence of a magnetic field perpendicular to the discharge electric field. In a SiH4(10%)/Ar discharge, time‐averaged spectroscopic measurements showed that profile control of not only plasmas but also SiH* was possible by varying the field strength. The emission intensity of SiH* was increased with the field strength. These results suggest that the present new configuration with cross magnetic field can make thin films on a large‐area substrate outside the multielectrodes uniform and can enhance the deposition rate.
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