Resistivity and Density of Ge Films Obliquely Deposited in Vacuum
作者:
Masaru Takahashi,
Hideomi Onishi,
Osamu Tada,
期刊:
Journal of Applied Physics
(AIP Available online 1971)
卷期:
Volume 42,
issue 2
页码: 833-836
ISSN:0021-8979
年代: 1971
DOI:10.1063/1.1660101
出版商: AIP
数据来源: AIP
摘要:
Ge films were made at 5×10−6Torr by an oblique deposition. Resistivity and its change due to oxygen exposure were measured for different deposition angles. Resistivity anisotropy and its change caused by oxygen exposure were also measured. They increased with the deposition angle. The mass of the film was measured by a microbalance and its density was calculated. The density of the film was less than that of bulk and became smaller with an increase of the deposition angle. These phenomena are explained by the self‐shadowing effect.
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