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Resistivity and Density of Ge Films Obliquely Deposited in Vacuum

 

作者: Masaru Takahashi,   Hideomi Onishi,   Osamu Tada,  

 

期刊: Journal of Applied Physics  (AIP Available online 1971)
卷期: Volume 42, issue 2  

页码: 833-836

 

ISSN:0021-8979

 

年代: 1971

 

DOI:10.1063/1.1660101

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Ge films were made at 5×10−6Torr by an oblique deposition. Resistivity and its change due to oxygen exposure were measured for different deposition angles. Resistivity anisotropy and its change caused by oxygen exposure were also measured. They increased with the deposition angle. The mass of the film was measured by a microbalance and its density was calculated. The density of the film was less than that of bulk and became smaller with an increase of the deposition angle. These phenomena are explained by the self‐shadowing effect.

 

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