Measurements of electrically active dopant profiles in thin III–V semiconductor structures are critical to the development of high speed and optoelectronic devices. The point contact current voltage (PCIV) technique has previously been demonstrated to be a powerful method for the high spatial resolution carrier concentration profiling of III–V semiconductors, offering improved measurement range and resolution when compared withC‐Vmethods. For thin layers, the on‐bevel carrier concentration profile measured with the PCIV technique differs from the electrically active net dopant profile. These differences are due to carrier diffusion. Poisson analysis can account for the diffusion of the carriers away from the dopant atoms and provide a clearer picture of the dopant profile in the material. In this paper we demonstrate application of the Poisson equation to the interpretation of PCIV measurements on thin III–V semiconductor structures of current interest.