首页   按字顺浏览 期刊浏览 卷期浏览 Be diffusion at the emitter‐base junction of graded AlInAs/GaInAs heterojunction bipola...
Be diffusion at the emitter‐base junction of graded AlInAs/GaInAs heterojunction bipolar transistors

 

作者: R. A. Metzger,   M. Hafizi,   R. G. Wilson,   W. E. Stanchina,   J. F. Jensen,   L. G. McCray,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1992）
卷期: Volume 10, issue 6  

页码: 2347-2350

 

ISSN:1071-1023

 

年代: 1992

 

DOI:10.1116/1.586065

 

出版商: American Vacuum Society

 

关键词: BERYLLIUM;DIFFUSION;HETEROJUNCTIONS;BIPOLAR TRANSISTORS;ALUMINIUM ARSENIDES;INDIUM ARSENIDES;GALLIUM ARSENIDES;TERNARY COMPOUNDS;SUPERLATTICES;THICKNESS;CRYSTAL DOPING;DESIGN;METALLIZATION;FABRICATION;(Al,In)As;(Ga,Al)As

 

数据来源: AIP

 

摘要:

Compositional grading at the emitter‐base junction ofNpnheterojunction bipolar transistors (HBTs) has been achieved by using a nine period graded gap AlInAs/GaInAs superlattice of 300 Å thickness. The as designed 500 Å base region was doped using Be fluxes that ranged from 0.8×1012to 1.4×1012atoms/cm2 s. Growth over this flux range resulted in a base doping of 4.5×1019cm−3with the highest flux producing an additional 160 Å of Be penetration into the graded region as compared with the lowest flux. The dc and rf characteristics of the graded emitter‐base HBTs are found to be tolerant to this degree of Be outdiffusion.

 

点击下载:  PDF (363KB)



返 回