A new technique based on deposition of metallic film at room temperature followed by laser irradiation, for the formation of Ohmic Contacts on semiconducting oxides, has been developed. Aluminum or nickel film about 1 &mgr;m thick was deposited onn‐type polycrystalline barium titanate (BaTi03) substrates and irradiated withQ‐switched ruby laser pulses. This technique produces low‐resistance Ohmic contacts which do not age and remain stable over a wide temperature range.