Reordering of polycrystalline Pd2Si on epitaxial Pd2Si
作者:
C. M. Comrie,
J. C. Liu,
L. S. Hung,
J. W. Mayer,
期刊:
Journal of Applied Physics
(AIP Available online 1988)
卷期:
Volume 63,
issue 7
页码: 2402-2405
ISSN:0021-8979
年代: 1988
DOI:10.1063/1.341059
出版商: AIP
数据来源: AIP
摘要:
Polycrystalline Pd2Si is found to reorder on top of epitaxial Pd2Si during silicide growth. The interface between polycrystalline Pd2Si and epitaxial Pd2Si is, thus, not immobile with respect to the silicide lattice during silicide formation and it is, therefore, not possible to use this interface as a structural marker in order to monitor diffusion in epitaxial Pd2Si. The use of Ti as an inert marker has shown that Si is the dominant diffusing species in epitaxial Pd2Si during silicide formation.
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