Single InGaAs quantum wires were fabricated by low pressure metal organic chemical vapor deposition on V‐grooved InP substrates. For substrate patterning a new wet chemical etching process that leads to high quality V‐grooves with {111}A facets was used. The growth parameters of the InP buffer layer have a strong impact on the quantum wire formation. Scanning electron microscopy, photoluminescence, and spatially resolved cathodoluminescence experiments have been performed to characterize the structures. The crescent shaped InGaAs quantum wires have dimensions of about 13 nm height and 100 nm width. The wire luminescence is found to be at &lgr;=1575 nm (FWHM=17 meV). ©1996 American Institute of Physics.