Character and distribution of vacancies in Czochralski‐grown silicon ingots
作者:
S. Dannefaer,
T. Bretagnon,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 77,
issue 11
页码: 5584-5588
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.359200
出版商: AIP
数据来源: AIP
摘要:
Positron lifetime investigations of vacancy distributions in ingots of silicon have shown that vacancies are retained after growth at nearly constant concentrations close to 3×1016cm−3. The vacancies are generally monovacancies and are suggested to be trapped by oxygen clusters. Trapped divacancies can also be formed but they are unstable upon heat treatment at 1000 °C for 16 h. This observation is invoked to explain anomalous oxygen precipitation. This heat treatment has little effect on the distributions of monovacancies in the ingots investigated, so the complexes between vacancies and oxygen clusters are suggested to be formed at temperatures above 1000 °C during the growth. ©1995 American Institute of Physics.
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