Microwave spectroscopic measurement of the electron density in a planar discharge: Relation to reactive‐ion etching of silicon oxide
作者:
C. A. M. de Vries,
A. J. van Roosmalen,
G. C. C. Puylaert,
期刊:
Journal of Applied Physics
(AIP Available online 1985)
卷期:
Volume 57,
issue 9
页码: 4386-4390
ISSN:0021-8979
年代: 1985
DOI:10.1063/1.335458
出版商: AIP
数据来源: AIP
摘要:
It is demonstrated that microwave cutoff can be used to measure absolute electron densities for CHF3, Ar, and O2plasmas in a batch‐mode planar reactor excited at 13.56 MHz. The densities obtained are between 1015and 1016m−3for all gases and a large set of conditions (pressure, rf power, electrode spacing). A comparison with selective etching of SiO2over Si in the same reactor shows a qualitative agreement between the substrate ion flux calculated from the electron density and the etch rate of silicon oxide; the apparent sputter yield ranges from 0.4 to 1.4 molecules per ion.
点击下载:
PDF
(404KB)
返 回