Aukerman and Willardson's analysis of the temperature dependence of the two‐band Hall coefficient is extended to higher carrier concentrations, where the statistics are no longer classical. It is shown that the Hall coefficient behavior evolves in a characteristic fashion, and that useful information may be extracted from this behavior. Experimental Hall data onn‐type GaAs and GaSb and onp‐type GeTe, SnTe, PbTe, and Bi2Te3are found to conform to the predictions of the theory. The importance of distinguishing carefully between the effects of temperature and carrier concentration is emphasized, and it is shown that confusing the two can and has led to erroneous interpretations of experimental data.