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Structural dependent electrical characteristics of submicron gallium arsenide devices

 

作者: H. L. Grubin,   J. P. Kreskovsky,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1984）
卷期: Volume 2, issue 3  

页码: 527-533

 

ISSN:0734-211X

 

年代: 1984

 

DOI:10.1116/1.582812

 

出版商: American Vacuum Society

 

关键词: GALLIUM ARSENIDES;ELECTRICAL PROPERTIES;TRANSIENTS;SEMICONDUCTOR DIODES;INTERFACES;GATES;SEMICONDUCTOR DEVICES;ONE−DIMENSIONAL CALCULATIONS;NUMERICAL SOLUTION

 

数据来源: AIP

 

摘要:

Numerical studies of the transient and dc electrical behavior of submicron N+N−N+gallium arsenide structures are discussed. It is shown that the transient results are dominated, during the first fraction of a picosecond, by displacement current contributions. Velocity overshoot is less important. Under dc conditions and high bias levels, submicron effects may be masked by transport within the N+regions.

 

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