Thin metallic, oriented crystalline NiSi2films that are suitable for additional epitaxial growth have been formed on amorphous SiO2layers on Si substrates. The orientation of the Si substrate is maintained in the NiSi2film as if the SiO2is not present. This was achieved by combining the separation by implantation of oxygen process ande‐beam evaporation techniques. The results are comparable with NiSi2films formed directly on Si. This technique should, in general, be applicable to other silicides that have been epitaxially grown on Si.