Electrical and structural properties of InxGa1−xN on GaAs
作者:
C. R. Abernathy,
J. D. MacKenzie,
S. R. Bharatan,
K. S. Jones,
S. J. Pearton,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 66,
issue 13
页码: 1632-1634
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.113875
出版商: AIP
数据来源: AIP
摘要:
InxGa1−xN (x=0.07–1.0) layers were grown on GaAs substrates by metalorganic molecular beam epitaxy. The films display strongn‐type conductivity (n≳1020cm−3) for a wide range of compositions. The use of an H2rather than a He carrier gas produces a lower carrier concentration in the as‐grown material. The InxGa1−xN is single crystal at low Ga concentrations with the lattice mismatch accommodated by a high density of stacking faults and microtwins. The InN layers contain only the cubic phase, while the ternaries contain both cubic and hexagonal phases.
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