Atomic transport of oxygen in nonstoichiometric oxides
作者:
J.L. Routbort,
G.W. Tomlins,
期刊:
Radiation Effects and Defects in Solids
(Taylor Available online 1995)
卷期:
Volume 137,
issue 1-4
页码: 233-238
ISSN:1042-0150
年代: 1995
DOI:10.1080/10420159508222727
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
Atomic transport of oxygen in nonstoichiometric oxides is an extremely important topic that overlaps science and technology. In many cases, diffusion of oxygen controls sintering, grain growth, and creep. High oxygen diffusivity is critical for efficient operation of many fuel cells. Additionally, oxygen diffusivities are an essential ingredient in any point defect model. Secondary ion mass spectrometry (SIMS) is the most accurate modern technique for measuring oxygen tracer diffusion. This paper will briefly review the principles and applications of SIMS for the measurement of oxygen transport. Case studies will be taken from recent work on ZnO and selected high-temperature superconductors.
点击下载:
PDF (386KB)
返 回