GaN decomposition is studied at metallorganic vapor phase epitaxy pressures (i.e., 10–700 Torr) in flowingH2.For temperatures ranging from 850 to 1050 °C, the GaN decomposition rate is accelerated when theH2pressure is increased above 100 Torr. The Ga desorption rate is found to be independent of pressure, and therefore, does not account for the enhanced GaN decomposition rate. Instead, the excess Ga from the decomposed GaN forms droplets on the surface which, for identical annealing conditions, increase in size as the pressure is increased. Possible connections between the enhanced GaN decomposition rate, the coarsening of the nucleation layer during the ramp to high temperature, and increased GaN grain size at high temperature are discussed. ©1998 American Institute of Physics.