An ArF excimer laser has been used to achieve homoepitaxy of GaP at 500 °C using trimethylgallium and tertiarybutylphosphine as the precursor gases. Dependence of epitaxial growth on several parameters is examined. It is found that at 500 °C, in the presence of laser radiation, higher growth rate and superior crystalline properties of GaP are achieved compared to purely thermal growth. Electrical properties ofp‐ndiodes fabricated via Zn doping have also been examined.