Raman scattering of InSb quantum dots grown on InP substrates
作者:
G. Armelles,
T. Utzmeier,
P. A. Postigo,
F. Briones,
J. C. Ferrer,
P. Peiro´,
A. Cornet,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 9
页码: 6339-6342
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365169
出版商: AIP
数据来源: AIP
摘要:
In this paper we present the Raman scattering of self-assembled InSb dots grown on (001) oriented InP substrates. The samples were grown by pulsed molecular beam epitaxy mode. Two types of samples have been investigated. In one type the InSb dots were capped with 200 monolayers of InP; in the other type no capping was deposited after the InSb dot formation. We observe two peaks in the Raman spectra of the uncapped dot, while only one peak is observed in the Raman spectra of the capped dots. In the case of the uncapped dots the peaks are attributed to LO-like and TO-like vibration of completely relaxed InSb dots, in agreement with high resolution transmission electron microscopy photographs. The Raman spectra of the capped dot suggest a different strain state in the dot due to the capping layer. ©1997 American Institute of Physics.
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