Resonant electron tunneling in ZnSe/BeTe double‐barrier, single‐quantum‐well heterostructures
作者:
U. Lunz,
M. Keim,
G. Reuscher,
F. Fischer,
K. Schu¨ll,
A. Waag,
G. Landwehr,
期刊:
Journal of Applied Physics
(AIP Available online 1996)
卷期:
Volume 80,
issue 11
页码: 6329-6332
ISSN:0021-8979
年代: 1996
DOI:10.1063/1.363711
出版商: AIP
数据来源: AIP
摘要:
We report on resonant tunneling through ZnSe/BeTe double‐barrier, single‐quantum‐well structures. Negative differential resistance has been observed in the current–voltage characteristics up to room temperature. Due to a conduction‐band offset of more than 2 eV, four resonances with negative differential resistance could be detected for this semiconductor material combination at liquid‐helium temperature. The structures exhibit a peak‐to‐valley ratio up to 6:1 at 4.2 K. Current–voltage characteristics as a function of temperature have been studied and analyzed. ©1996 American Institute of Physics.
点击下载:
PDF
(73KB)
返 回