Charge‐carrier kinetics in semiconductors by microwave conductivity measurements
作者:
C. Swiatkowski,
A. Sanders,
K.‐D. Buhre,
M. Kunst,
期刊:
Journal of Applied Physics
(AIP Available online 1995)
卷期:
Volume 78,
issue 3
页码: 1763-1775
ISSN:0021-8979
年代: 1995
DOI:10.1063/1.360206
出版商: AIP
数据来源: AIP
摘要:
Theory and measurements of the conductivity and the (transient) photoconductivity in the microwave frequency range are presented. The theory is tested on noninvasive measurements of semiconductors with known properties, i.e., Si wafers, in a simple apparatus. Quantitative agreement between theory and experiment is found without the use of adjustable parameters. A contactless and accurate determination of the conductivity of Si wafers in a restricted conductivity range is proposed. The quantitative evaluation of photoconductivity measurements makes a detailed discussion of nonuniform photoconductivity possible. The requirements for reliable measurements of nonhomogeneous charge carrier kinetics are discussed. ©1995 American Institute of Physics.
点击下载:
PDF
(1883KB)
返 回