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SFM characterization of SrBi2Ta2O9thin films for nanoscale memory applications

 

作者: A. Gruverman,   K. Hironaka,   Y. Ikeda,   K.M. Satyalakshmi,   A. Pignolet,   M. Alexe,   N.D. Zakharov,   D. Hesse,  

 

期刊: Integrated Ferroelectrics  (Taylor Available online 1999)
卷期: Volume 27, issue 1-4  

页码: 159-169

 

ISSN:1058-4587

 

年代: 1999

 

DOI:10.1080/10584589908228465

 

出版商: Taylor & Francis Group

 

关键词: scanning force microscopy;ferroelectric thin film;domain structure;FERAM

 

数据来源: Taylor

 

摘要:

Scanning force microscopy (SFM) has been used for comparative studies of domain structures in SrBi2Ta2O9(SBT) thin films grown by sol-gel, Flash MOCVD and pulsed laser deposition (PLD) techniques. Investigation has been focused on establishing microscopic correlation between crystallinity, domain arrangements and switching behavior of the films. It has been shown that the domain contrast of an individual grain and its switchability are strongly dependent on the grain orientation. The remnant polarization value was found to decrease with decrease in the fraction ofa-oriented grains which exhibit sharp domain contrast.

 

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