SFM characterization of SrBi2Ta2O9thin films for nanoscale memory applications
作者:
A. Gruverman,
K. Hironaka,
Y. Ikeda,
K.M. Satyalakshmi,
A. Pignolet,
M. Alexe,
N.D. Zakharov,
D. Hesse,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1999)
卷期:
Volume 27,
issue 1-4
页码: 159-169
ISSN:1058-4587
年代: 1999
DOI:10.1080/10584589908228465
出版商: Taylor & Francis Group
关键词: scanning force microscopy;ferroelectric thin film;domain structure;FERAM
数据来源: Taylor
摘要:
Scanning force microscopy (SFM) has been used for comparative studies of domain structures in SrBi2Ta2O9(SBT) thin films grown by sol-gel, Flash MOCVD and pulsed laser deposition (PLD) techniques. Investigation has been focused on establishing microscopic correlation between crystallinity, domain arrangements and switching behavior of the films. It has been shown that the domain contrast of an individual grain and its switchability are strongly dependent on the grain orientation. The remnant polarization value was found to decrease with decrease in the fraction ofa-oriented grains which exhibit sharp domain contrast.
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