Epitaxial growth of InSb on sapphire by rf sputtering
作者:
T. Miyazaki,
M. Mori,
S. Adachi,
期刊:
Applied Physics Letters
(AIP Available online 1991)
卷期:
Volume 58,
issue 2
页码: 116-118
ISSN:0003-6951
年代: 1991
DOI:10.1063/1.104972
出版商: AIP
数据来源: AIP
摘要:
InSb films have been deposited directly by rf sputtering on sapphire substrates. X‐ray diffraction and scanning electron microscopy data are presented to show that the InSb layer on sapphire (0001) is epitaxial and grows with (111) parallel to the substrate surface. Optical absorption studies of the epitaxial film also reveal distinct spectral features which resemble these from bulk, single‐crystal InSb.
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