Leaky wave room‐temperature double heterostructure GaAs:GaAlAs diode laser
作者:
D. R. Scifres,
W. Streifer,
R. D. Burnham,
期刊:
Applied Physics Letters
(AIP Available online 1976)
卷期:
Volume 29,
issue 1
页码: 23-25
ISSN:0003-6951
年代: 1976
DOI:10.1063/1.88881
出版商: AIP
数据来源: AIP
摘要:
Operation of a new cleaved facet room‐temperature double heterostructure GaAs:GaAlAs laser utilizing leaky wave coupling through the substrate is reported. The coupling mechanism is analogous to that of prism coupling from a waveguide, but no external components are used. The laser produces a highly collimated output beam with approximately 2°×8° divergence. The peak pulsed beam power at 2 times threshold is 1.5 W from one end with approximately one‐third of this power in the collimated beam. The total external differential quantum efficiency is on the order of 35%. These desirable characteristics are obtained at the expense of threshold current increases of approximately 30%.
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