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Leaky wave room‐temperature double heterostructure GaAs:GaAlAs diode laser

 

作者: D. R. Scifres,   W. Streifer,   R. D. Burnham,  

 

期刊: Applied Physics Letters  (AIP Available online 1976)
卷期: Volume 29, issue 1  

页码: 23-25

 

ISSN:0003-6951

 

年代: 1976

 

DOI:10.1063/1.88881

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Operation of a new cleaved facet room‐temperature double heterostructure GaAs:GaAlAs laser utilizing leaky wave coupling through the substrate is reported. The coupling mechanism is analogous to that of prism coupling from a waveguide, but no external components are used. The laser produces a highly collimated output beam with approximately 2°×8° divergence. The peak pulsed beam power at 2 times threshold is 1.5 W from one end with approximately one‐third of this power in the collimated beam. The total external differential quantum efficiency is on the order of 35%. These desirable characteristics are obtained at the expense of threshold current increases of approximately 30%.

 

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