Orientation‐controlled InP microcrystals are grown on planar SiO2substrates by reacting molten In thin films with vaporized phosphorus in a closed system. Indium phosphide crystals having a (111) texture of about 7 &mgr;m in size, grow at the periphery of the In islands when the substrate is heated at 500 °C under a phosphorus vaporizing temperature of 330 °C. When the In thin films are triangularly patterned, the in‐plane ⟨110⟩ crystal direction is aligned parallel to the pattern edges by the capillary force effect between the In liquid and InP crystal.