A model for theJ‐V‐Pcharacteristics for the dc diode sputtering discharges had already been developed. Here we analyze this model and show that theJ‐Vlaw is independent of the specific form of the electric field distribution and of the distribution functions of the velocities with which the ions reach the target. The distribution functions have an influence on theJ‐Vcoefficient and on the pressure dependence only. We also show two equivalent possible ways for developing the model: one based on the average velocity of the ions and the other on the average velocity of the electrons. A generalized model which is valid for both discharges: diodes and magnetrons is described herein. Its’J‐Vlaw is a superposition of the termsV3/2andV2. Experimental results are given to support the model.