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Monolithic optoelectronic integration of a GaAlAs laser, a field‐effect transistor, and a photodiode

 

作者: N. Bar‐Chaim,   K. Y. Lau,   I. Ury,   A. Yariv,  

 

期刊: Applied Physics Letters  （AIP Available online 1984）
卷期: Volume 44, issue 10  

页码: 941-943

 

ISSN:0003-6951

 

年代: 1984

 

DOI:10.1063/1.94598

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A low threshold buried heterostructure laser, a metal‐semiconductor field‐effect transistor, and ap‐i‐nphotodiode have been integrated on a semi‐insulating GaAs substrate. The circuit was operated as a rudimentary optical repeater. The gain bandwidth product of the repeater was measured to be 178 MHz.

 

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