Electrons and holes in amorphous silicon
作者:
D. Weaire,
D. Hobbs,
期刊:
Philosophical Magazine Letters
(Taylor Available online 1993)
卷期:
Volume 68,
issue 4
页码: 265-272
ISSN:0950-0839
年代: 1993
DOI:10.1080/09500839308242423
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
We have used the equation-of-motion method to simulate the motion of wave packets representing electrons in the presence of a potential gradient for both crystalline and amorphous silicon. This is used to determine the sign of the electron effective mass for various energies in the valence and conduction band. There is a close correspondence between the crystalline and amorphous results and there is therefore no indication of the double-sign anomaly of the Hall coefficient.
点击下载:
PDF (403KB)
返 回