Production of intense atomic nitrogen beam used for doping and synthesis of nitride film
作者:
Ning Xu,
Yuan‐Cheng Du,
Zhi‐Feng Ying,
Fu‐Ming Li,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 10
页码: 1364-1366
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.117437
出版商: AIP
数据来源: AIP
摘要:
An arc‐heated source for producing an intense nitrogen atom beam with intensity of 1019atoms/sr s and kinetic energies of 0.5–4 eV is presented. The arc discharge has been carried out in pure nitrogen gas and maintained stable in an arc operating pressure of 30–300 Torr. The beam kinetic energy changes with the arc pressure, and is insensitive to the arc current. Auger electron spectroscopy analysis showed that a TiNO layer with a thickness of about 100 A˚ was formed on the smooth Ti wafer at room temperature with interaction of the atomic nitrogen beam. ©1996 American Institute of Physics.
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