Contactless electroreflectance and piezoreflectance studies of temperature-dependent strain in ZnTe/GaAs heterostructures with ZnSe/ZnTe superlattice buffer layers
作者:
R. C. Tu,
Y. K. Su,
H. J. Chen,
Y. S. Huang,
S. T. Chou,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 24
页码: 3184-3186
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121587
出版商: AIP
数据来源: AIP
摘要:
The temperature-dependent optical properties of ZnTe epilayers grown on GaAs substrates by molecular beam epitaxy with and without ZnSe/ZnTe strained-layer superlattice (SLS) buffer layers have been studied using contactless electroreflectance (CER) and piezoreflectance (PzR). Our ZnTe epilayers of 1.5 &mgr;m in thickness grown on GaAs substrates are under a biaxial tensile strain according to the results shown in CER and PzR spectra. Furthermore, the strain induced energy splitting between heavy- and light-hole valence bands in the ZnTe epilayer can be reduced by using the ZnSe/ZnTe SLS buffer layers. We have also justified the temperature-dependent energy splitting between heavy- and light-hole valence bands for ZnTe through theoretical calculations. Discrepancy between experiments and calculations indicates that the residual mismatch-induced strain as well as the thermally induced strain during cooling must be taken into account at the same time. ©1998 American Institute of Physics.
点击下载:
PDF
(80KB)
返 回