Accurate method for the determination of bulk minority-carrier lifetimes of mono- and multicrystalline silicon wafers
作者:
Jan Schmidt,
Armin G. Aberle,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 9
页码: 6186-6199
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.364403
出版商: AIP
数据来源: AIP
摘要:
An accurate method for the determination of the bulk minority-carrier recombination lifetime of crystalline silicon wafers of typical thickness(<0.5mm) is presented. The method consists of two main steps: first, both wafer surfaces are passivated with silicon nitride films fabricated at low temperature (<400 °C) in a remote plasma-enhanced chemical vapor deposition system. Second, the effective minority-carrier lifetime of the wafer is measured by means of the contactless microwave-detected photoconductance decay technique. Due to the outstanding degree of surface passivation provided by remote-plasma silicon nitride films, the bulk minority-carrier lifetime can be very accurately determined from the measured effective minority-carrier lifetime. The method is suited for the bulk minority-carrier lifetime determination ofp-type andn-type silicon wafers with doping concentrations in the1014–1017cm-3range. We demonstrate the potential of the method for commercially available float-zone, Czochralski, and multicrystalline silicon wafers of standard thickness. ©1997 American Institute of Physics.
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