Some observations on parametric action in transistor mixers
作者:
I.Gök,
F.J.Hyde,
期刊:
Radio and Electronic Engineer
(IET Available online 1966)
卷期:
Volume 32,
issue 1
页码: 16-20
年代: 1966
DOI:10.1049/ree.1966.0051
出版商: IERE
数据来源: IET
摘要:
Experimental results are presented for the type 2N502 micro-alloy graded-base transistor, which show the significance of parametric amplification at the collector-base diode in addition to normal mixing at the emitter-base diode. The latter is primarily due to the resistive non-linearity at the emitter, the parametric action at the collector being due to the non-linear junction capacitance.
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