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Quantitative depth profiling of boron in shallow BF+2‐implanted silicon by using laser‐ionization sputtered neutral mass spectrometry

 

作者: Yasuhiro Higashi,   Tetsuya Maruo,   Yoshikazu Homma,   Masayasu Miyake,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1996）
卷期: Volume 14, issue 2  

页码: 763-767

 

ISSN:1071-1023

 

年代: 1996

 

DOI:10.1116/1.588711

 

出版商: American Vacuum Society

 

关键词: DOPED MATERIALS;ION IMPLANTATION;SILICON;BORON ADDITIONS;ANNEALING;SPUTTERING;IONIZATION;MASS SPECTRA;LASER RADIATION;Si:B

 

数据来源: AIP

 

摘要:

Boron depth profiles in low‐energy BF+2‐implanted silicon were measured using laser‐ionization sputtered neutral mass spectrometry and secondary‐ion mass spectrometry. The laser‐ionization sputtered neutral mass spectrometry measurements provided more accurate boron profiles in the ultrashallow regions (below 20 nm) than the secondary‐ion mass spectrometry measurements. A pileup of boron atoms in the region below 5 nm after annealing was revealed by laser‐ionization sputtered neutral mass spectrometry.

 

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