Pulse‐laser‐irradiated high‐brightness photoelectron source
作者:
P. E. Oettinger,
I. Bursuc,
R. E. Shefer,
E. Pugh,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 50,
issue 26
页码: 1867-1869
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.97720
出版商: AIP
数据来源: AIP
摘要:
Linac‐driven free‐electron lasers, new powerful synchrotron radiation sources, and advanced high‐power microwave devices will require very bright emitters of electrons to operate efficiently. By irradiating a Cs3Sb photocathode with a frequency‐doubled, Nd:glass laser, we have obtained a very high normalized electron beam brightness of over 1011A/m2/rad2. Peak currents emitted from the 1 cm2surface in 50 ns pulses ranged up to 80 A. Measured normalized emittances were between 5 and 9 &pgr; mm mrad.
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