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Pulse‐laser‐irradiated high‐brightness photoelectron source

 

作者: P. E. Oettinger,   I. Bursuc,   R. E. Shefer,   E. Pugh,  

 

期刊: Applied Physics Letters  (AIP Available online 1987)
卷期: Volume 50, issue 26  

页码: 1867-1869

 

ISSN:0003-6951

 

年代: 1987

 

DOI:10.1063/1.97720

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Linac‐driven free‐electron lasers, new powerful synchrotron radiation sources, and advanced high‐power microwave devices will require very bright emitters of electrons to operate efficiently. By irradiating a Cs3Sb photocathode with a frequency‐doubled, Nd:glass laser, we have obtained a very high normalized electron beam brightness of over 1011A/m2/rad2. Peak currents emitted from the 1 cm2surface in 50 ns pulses ranged up to 80 A. Measured normalized emittances were between 5 and 9 &pgr; mm mrad.

 

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