Implantation of boron ions inn‐type Si wafers was achieved with the plasma flux from a CO2laser‐produced boron plasma. Junction depths of up to 0.4 &mgr;m and peak concentrations of boron atoms of greater than 1020cm−3were achieved with a single 7‐J CO2TEA laser pulse. The measured ion energies of ∼1 keV in the boron flux resulted both in the high concentration near the surface and also the anomalous deep penetrating tail.