Application of a low‐pressure radio frequency discharge source to polysilicon gate etching
作者:
J. M. Cook,
D. E. Ibbotson,
D. L. Flamm,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1990)
卷期:
Volume 8,
issue 1
页码: 1-4
ISSN:0734-211X
年代: 1990
DOI:10.1116/1.584859
出版商: American Vacuum Society
关键词: SILICON;POLYMERS;ETCHING;RF SYSTEMS;ANISOTROPY;RESONANCE;CHLORIDES;OXYGEN;WAFERS;SILICON OXIDES;OPTIMIZATION;CYCLOTRON RESONANCE;RESONATORS;MHZ RANGE;PRESSURE CONTROL;Si
数据来源: AIP
摘要:
We have shown that a discharge can be sustained at low pressure (≲10−3Torr) in a single‐wafer reactor using experimental quarter‐wave helical resonator structures operated at radio frequencies. These discharge sources have been used to etch submicron‐wide polysilicon gates with chlorine and chlorine/oxygen mixtures. Selectivities for undoped polysilicon over oxide and hard baked trilevel photoresist were 70:1 and 2.8:1, respectively, in a 75 W discharge operated at 0.1 mTorr with a Cl2/1% O2feed gas mixture. Anisotropic profiles of 0.25 μm lines were obtained across 100 mm wafers with negligible linewidth loss. These preliminary experiments show that rf resonator discharges may offer an alternative to low‐pressure microwave discharges such as those based on electron cyclotron resonance.
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