Magnetoelastic properties of epitaxial holmium and erbium thin films
作者:
M. Ciria,
J. I. Arnaudas,
A. del Moral,
M. R. Wells,
R. C. C. Ward,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 16
页码: 2044-2046
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121259
出版商: AIP
数据来源: AIP
摘要:
The magnetoelastic (MEL) stresses of single crystal Ho and Er thin films are measured at low temperatures and in applied magnetic fields up to 12 T by means of a capacitive cantilever technique, to determine the irreducible second-order basal plane MEL stressB&ggr;,2. For Ho, the data are well fit by the Callen and Callen law, givingB&ggr;,2=0.29 GPa at 0 K and 12 T, slightly larger than the bulk value, which suggest a negligible effect of the clamping onB&ggr;,2. For Er, the lack of saturation prevents the determination of the single-ion contribution toB&ggr;,2at 0 K. Nevertheless, its sign, which is negative, agrees with the theoretical crystal field prediction. ©1998 American Institute of Physics.
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