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Magnetoelastic properties of epitaxial holmium and erbium thin films

 

作者: M. Ciria,   J. I. Arnaudas,   A. del Moral,   M. R. Wells,   R. C. C. Ward,  

 

期刊: Applied Physics Letters  (AIP Available online 1998)
卷期: Volume 72, issue 16  

页码: 2044-2046

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.121259

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The magnetoelastic (MEL) stresses of single crystal Ho and Er thin films are measured at low temperatures and in applied magnetic fields up to 12 T by means of a capacitive cantilever technique, to determine the irreducible second-order basal plane MEL stressB&ggr;,2. For Ho, the data are well fit by the Callen and Callen law, givingB&ggr;,2=0.29 GPa at 0 K and 12 T, slightly larger than the bulk value, which suggest a negligible effect of the clamping onB&ggr;,2. For Er, the lack of saturation prevents the determination of the single-ion contribution toB&ggr;,2at 0 K. Nevertheless, its sign, which is negative, agrees with the theoretical crystal field prediction. ©1998 American Institute of Physics.

 

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