Proposals for exact-point transmission-electron microscopy using focused ion beam specimen-preparation technique
作者:
T. Ishitani,
Y. Taniguchi,
S. Isakozawa,
H. Koike,
T. Yaguchi,
H. Matsumoto,
T. Kamino,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1998)
卷期:
Volume 16,
issue 4
页码: 2532-2537
ISSN:1071-1023
年代: 1998
DOI:10.1116/1.590204
出版商: American Vacuum Society
数据来源: AIP
摘要:
A focused ion beam (FIB) has been actively applied for preparation of about 0.1-μm-thick specimens for transmission electron microscopes (TEMs). For device failure analyses, however, it is mostly difficult to prepare the exact-point TEM specimens. The reason is that the failures are mostly beneath the surface and their exact locations are unknown. Then, even step-by-step FIB cross sectioning may sputter away the failures in the TEM specimen preparation. In the present study, we review two proposals for exact-point TEM microscopy using FIB specimen-preparation technique: (1) high-voltage scanning electron microscopes (HV-SEMs) imaging in TEM and (2) energy filtering TEM (EF-TEM) imaging. The HV-SEM imaging provides information on not only the sample surface but also the inner structure up to about 1μm deep. The EF-TEM imaging is applicable even for 0.5-μm-thick specimens at 100 kV in the accelerating voltage, in contrast with about 0.1-μm-thick specimens for conventional TEM imaging. Preliminary experiments have supported that either proposal presumably improves the yield of the exact-point TEM inspection.
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