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3.06 &mgr;m InGaAsSb/InPSb diode lasers grown by organometallic vapor‐phase epitaxy

 

作者: R. J. Menna,   D. R. Capewell,   Ramon U. Martinelli,   P. K. York,   R. E. Enstrom,  

 

期刊: Applied Physics Letters  （AIP Available online 1991）
卷期: Volume 59, issue 17  

页码: 2127-2129

 

ISSN:0003-6951

 

年代: 1991

 

DOI:10.1063/1.106101

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have observed laser action at &lgr;=3.06 &mgr;m in In0.77Ga0.23As0.74Sb0.26/InP0.7Sb0.3double heterojunction, diode lasers, which were grown by organometallic vapor‐phase epitaxy. The maximum operating temperature wasT=35 K, and typical threshold current densities were 200–330 A/cm2. At temperatures up to 35 K, the lasing wavelength decreased with increasing temperature owing to a band‐filling effect.

 

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