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Fault simulation in CMOS VLSI circuits

 

作者: M.E.Zaghloul,   D.Gobovic,  

 

期刊: IEE Proceedings E (Computers and Digital Techniques)  (IET Available online 1991)
卷期: Volume 138, issue 4  

页码: 203-212

 

年代: 1991

 

DOI:10.1049/ip-e.1991.0027

 

出版商: IEE

 

数据来源: IET

 

摘要:

In digital complementary metal-oxide semiconductor (CMOS) very large-scale integration (VLSI) circuits, physical faults such as transistor stuck-closed, floating line faults, and bridging faults (which include gate-to-drain shorts) cause complex analogue behaviour of the digital circuit. Some of these faults create an intermediate voltage level, which classical switch-level fault simulator techniques are unable to interpret. A general fault simulator is proposed which employs a new technique for evaluating the faulty subcircuit based on analysis of a nonlinear resistive circuit. The technique can be considered an extension of classical switch-level level fault simulators, in which most of the possible physical faults are considered.

 

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