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High‐field transport of holes in silicon

 

作者: Phillip M. Smith,   Jeffrey Frey,   P. Chatterjee,  

 

期刊: Applied Physics Letters  （AIP Available online 1981）
卷期: Volume 39, issue 4  

页码: 332-333

 

ISSN:0003-6951

 

年代: 1981

 

DOI:10.1063/1.92711

 

出版商: AIP

 

数据来源: AIP

 

摘要:

The room‐temperature drift velocity of holes in silicon has been measured for electric fields ranging from 9 to 234 kV/cm using a microwave time‐of‐flight technique. The measured velocity saturates at a value of 0.96±0.05×107cm/sec at a field strength of 175 kV/cm.

 

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