The use of an AlSiCu/TiN bilayer for the metallization of 1.0‐μm‐diam and 1.4‐μm‐deep straight wall contacts to 0.2‐μm‐deepn+andp+diffusions, results in an+/p−and ap+/ṇ− junction leakage lower than 10 pA even after nine heat treatments (60 min each) at 450 °C. However, there is a very important degradation of the contact chain resistance statistics at small contact size. On the other hand, the use of a Ti/TiN bilayer barrier under the AlSiCu/TiN interconnect maintains an+/p−and ap+/n−junction leakage lower than 20 pA and prevents the degradation of the contact chain resistance statistics after the nine heat treatments. It is finally demonstrated that a vent in nitrogen followed by a momentary air exposure of the Ti/TiN bilayer barrier results in larger contact resistance than a vent in nitrogen followed by a one hour long air exposure of the Ti/TiN bilayer barrier before the deposition of the AlSiCu/TiN interconnect.