Energy states of Ge-doped SiO2glass estimated through absorption and photoluminescence
作者:
Makoto Fujimaki,
Yoshimichi Ohki,
Hiroyuki Nishikawa,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 81,
issue 3
页码: 1042-1046
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.363885
出版商: AIP
数据来源: AIP
摘要:
The energy states of oxygen-deficient type defects in the vacuum ultraviolet region are discussed based on the experimental results of vacuum ultraviolet absorption, temperature dependence of the photoluminescence (PL) intensities at 4.3 and 3.1 eV, and lifetimes of the PLs. It was found that the oxygen-deficient type glass has a large absorption tail above 6 eV in addition to an absorption band around 5 eV and that the 3.1 eV PL intensity scarcely depends on temperature when excited above 6 eV. It was also found that the lifetime of the 4.3 eV PL is 9 ns and that of the 3.1 eV PL is 113 &mgr;s irrespective of the excitation photon energy. The obtained results are explainable by assuming that electrons excited into the conduction band by photons above 6 eV contribute to the PLs. ©1997 American Institute of Physics.
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