Dispersion relation, electron and hole effective masses in InxGa1−xAs single quantum wells
作者:
K. Oettinger,
Th. Wimbauer,
M. Drechsler,
B. K. Meyer,
H. Hardtdegen,
H. Lu¨th,
期刊:
Journal of Applied Physics
(AIP Available online 1996)
卷期:
Volume 79,
issue 3
页码: 1481-1485
ISSN:0021-8979
年代: 1996
DOI:10.1063/1.360988
出版商: AIP
数据来源: AIP
摘要:
We report on optical and electrical properties of modulation doped InxGa1−xAs/InP single quantum wells in the composition range 0.56≤x≤0.79. Cyclotron resonance, contactless Shubnikov–de Haas and magnetophotoluminescence experiments are used to obtain two dimensional carrier densities, effective masses of electrons and holes and scattering times. We present data which give evidence for zero magnetic field spin splitting. The dispersion relation for electrons and holes is presented. ©1996 American Institute of Physics.
点击下载:
PDF
(141KB)
返 回