Monte Carlo calculation on steady‐state electron transport properties in uncompensated and compensated Al0.25In0.75As at several lattice temperatures is reported. It is found that alloy scattering has a significant effect on electron drift velocities at high fields, and that the electron velocity‐electric field characteristics of compensated Al0.25In0.75As exhibit less temperature dependence than uncompensated Al0.25In0.75As. The small &Ggr; valley effective mass and the large &Ggr; toLand &Ggr; toXvalley separations of Al0.25In0.75As result in the excellent low‐field mobilities and the peak velocities in comparison to those of GaAs, InP, and In0.53Ga0.47As over the range of doping compensations considered.