Electron‐beam annealing of ion‐implantation damage in integrated‐circuit devices
作者:
T. I. Kamins,
P. H. Rose,
期刊:
Journal of Applied Physics
(AIP Available online 1979)
卷期:
Volume 50,
issue 3
页码: 1308-1311
ISSN:0021-8979
年代: 1979
DOI:10.1063/1.326163
出版商: AIP
数据来源: AIP
摘要:
The use of a large‐diameter pulsed electron beam to anneal ion‐implantation damage has been studied with application to integrated‐circuit structures. The annealing of arsenic‐implantedp‐njunction diodes shows that properly selected exposure to an electron beam can anneal implant damage and provide nearly ideal device characteristics. Tests on MOS capacitor structures show that the electron beam itself introduces states at the Si‐SiO2interface but that these states can be easily annealed during the low‐temperature metal alloy cycle. The practical utilization of the concept requires an electron beam uniform over the entire wafer area.
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