Space‐Charge Domains at Dislocation Sites
作者:
H. F. Matare´,
C. W. Laakso,
期刊:
Journal of Applied Physics
(AIP Available online 1969)
卷期:
Volume 40,
issue 2
页码: 476-482
ISSN:0021-8979
年代: 1969
DOI:10.1063/1.1657423
出版商: AIP
数据来源: AIP
摘要:
Germanium and silicon monocrystals with grown‐in artificial medium‐angle grain boundaries and isolated edge dislocations are subjected to a scanning electron beam (SEB) with simultaneous application of a bias field in a transverse direction. Amplification of the induced current signal yields oscillograms clearly revealing the polar character of defects and the junction behavior of a two‐dimensional array of edge dislocations. These results can be explained on account of the dislocation model, as discussed earlier, and support studies and conclusions with respect to the influence of the space charge of edge dislocations on carrier transport in crystals.
点击下载:
PDF
(521KB)
返 回