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Contactless electroreflectance study of a vertically coupled quantum dot-based InAs/GaAs laser structure

 

作者: Lionel Aigouy,   Todd Holden,   Fred H. Pollak,   N. N. Ledentsov,   W. M. Ustinov,   P. S. Kop’ev,   D. Bimberg,  

 

期刊: Applied Physics Letters  （AIP Available online 1997）
卷期: Volume 70, issue 25  

页码: 3329-3331

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.119160

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Contactless electroreflectance, at both 300 and 20 K, has been used to investigate a vertically coupled quantum dot (QD)-based InAs/GaAs laser structure. Signals have been observed from all the relevant portions of the sample including the QDs and wetting layer. The energies of the QD transitions provide evidence for both lateral as well as vertical coupling. ©1997 American Institute of Physics.

 

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