Synchrotron‐radiation‐induced deposition of boron and boron carbide films from boranes and carboranes: Decaborane
作者:
F. Keith Perkins,
R. A. Rosenberg,
Sunwoo Lee,
P. A. Dowben,
期刊:
Journal of Applied Physics
(AIP Available online 1991)
卷期:
Volume 69,
issue 7
页码: 4103-4109
ISSN:0021-8979
年代: 1991
DOI:10.1063/1.348422
出版商: AIP
数据来源: AIP
摘要:
Boron has been deposited successfully on Si(111) from the synchrotron‐radiation‐induced decomposition of decaborane (14), i.e., B10H14. The rate of deposition is limited by the adsorption rate of decaborane (14) on the surface. In addition there is some indication that there is an activation barrier to dissociative adsorption. The synchrotron‐radiation‐ induced growth rate of boron thin films from decaborane (14) is linear with coverage for a large range of thickness, suggesting a constant sticking coefficient for decaborane adsorption at room temperature.
点击下载:
PDF
(652KB)
返 回