Dynamic properties of semiconductor lasers
作者:
Minoru Ito,
Takeshi Ito,
Tatsuya Kimura,
期刊:
Journal of Applied Physics
(AIP Available online 1979)
卷期:
Volume 50,
issue 10
页码: 6168-6174
ISSN:0021-8979
年代: 1979
DOI:10.1063/1.325800
出版商: AIP
数据来源: AIP
摘要:
The dependence of relaxation oscillation on carrier diffusion length in AlGaAs lasers is analyzed using multimode rate equations containing carrier diffusion and spontaneous emission terms. A parameter representing coupling between carrier and light field distribution is introduced. The carrier diffusion shortens the delay time, the relaxation oscillation period, and the decay time constant and also makes spectral narrowing faster. The damping factor is enlarged and relaxation oscillation is suppressed as the carrier diffusion length becomes large. The diffusion length, normalized by stripe widthLD/W, is estimated to be about 0.6 by comparing the numerical results with the experimental tendency of transient response. Furthermore, relaxation oscillation is suppressed as the oscillation beam spot size becomes smaller.
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